<?xml version="1.0" encoding="ISO-8859-1"?>
<metadatalist>
	<metadata ReferenceType="Journal Article">
		<site>plutao.sid.inpe.br 800</site>
		<holdercode>{isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}</holdercode>
		<identifier>J8LNKAN8RW/3D53CNL</identifier>
		<repository>dpi.inpe.br/plutao/2012/11.28.15.12</repository>
		<lastupdate>2015:03.17.18.42.11 dpi.inpe.br/plutao@80/2008/08.19.15.01 administrator</lastupdate>
		<metadatarepository>dpi.inpe.br/plutao/2012/11.28.15.12.41</metadatarepository>
		<metadatalastupdate>2018:06.05.00.02.01 dpi.inpe.br/plutao@80/2008/08.19.15.01 administrator {D 2012}</metadatalastupdate>
		<secondarykey>INPE--PRE/</secondarykey>
		<doi>10.4028/www.scientific.net/MSF.717-720.197</doi>
		<label>lattes: 4359261479122193 6 MedeirosPPFSSSMM:2012:SiThFi</label>
		<citationkey>MedeirosPSFSSMM:2012:SiThFi</citationkey>
		<title>SixCy Thin Films Deposited at Low Temperature by Dual DC Magnetron Sputtering:Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties</title>
		<year>2012</year>
		<typeofwork>journal article</typeofwork>
		<numberoffiles>1</numberoffiles>
		<size>419 KiB</size>
		<author>Medeiros, Henrique Souza,</author>
		<author>Pessoa, Rodrigo Savio,</author>
		<author>Sagás, J. C.,</author>
		<author>Fraga, Mariana A,</author>
		<author>Santos, Lúcia Vieira,</author>
		<author>Silva Sobrinho, Argemiro S da,</author>
		<author>Massi, Marcos,</author>
		<author>Maciel, Homero S.,</author>
		<group></group>
		<group></group>
		<group></group>
		<group></group>
		<group>LAS-CTE-INPE-MCTI-GOV-BR</group>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<affiliation>Instituto Nacional de Pesquisas Espaciais (INPE)</affiliation>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<affiliation>Instituto Tecnológico de Aeronáutica (ITA)</affiliation>
		<electronicmailaddress>henrique_sm_@hotmail.com</electronicmailaddress>
		<electronicmailaddress>rodrigopessoa@gmail.com</electronicmailaddress>
		<electronicmailaddress>jcsagas@pop.com.br</electronicmailaddress>
		<electronicmailaddress>mafraga@ita.br</electronicmailaddress>
		<electronicmailaddress>lucia.vieira@univap.br</electronicmailaddress>
		<electronicmailaddress>argemiro@ita.br</electronicmailaddress>
		<electronicmailaddress>massi@ita.br</electronicmailaddress>
		<electronicmailaddress>homero@ita.br</electronicmailaddress>
		<e-mailaddress>lucia.vieira@univap.br</e-mailaddress>
		<journal>Materials Science Forum. Silicon Carbide and Releted Material Book Series</journal>
		<volume>717 - 720</volume>
		<number>PTS 1 AND 2</number>
		<pages>197-201</pages>
		<transferableflag>1</transferableflag>
		<contenttype>External Contribution</contenttype>
		<versiontype>publisher</versiontype>
		<keywords>Chemistry Analysis, DC Dual Magnetron Sputtering, FilmStoichiometry, Low Temperature Deposition, Silicon Carbide Thin Films.</keywords>
		<abstract>A DC dual magnetron sputtering system with graphite (C) and silicon (Si) targets was used to grow stoichiometric and non-stoichiometric silicon carbide (SixCy) thin films at low temperature. Two independently DC power sources were used to enable the total discharge power be shared, under certain proportions, between the Si and C magnetron cathodes. The motivation was to control the sputtering rate of each target so as to vary the stoichiometric ratio x/y of the deposited films. The species content, thickness and chemical bonds of as-deposited SixCy films were studied by Rutherford backscattering spectroscopy (RBS), profilometry analysis and Fourier transform infrared absorption (FTIR), respectively. Overall, the present work reveals a new reliable plasma sputtering technique for low temperature growth of amorphous SixCy thin films with the capability of tuning the degree of formation of a-SiC, a-Si and a-C bonds in the film bulk.</abstract>
		<area>ETES</area>
		<language>en</language>
		<targetfile>medeiros_sixcy.pdf</targetfile>
		<usergroup>administrator</usergroup>
		<usergroup>lattes</usergroup>
		<usergroup>marciana</usergroup>
		<readergroup>administrator</readergroup>
		<readergroup>marciana</readergroup>
		<visibility>shown</visibility>
		<readpermission>deny from all and allow from 150.163</readpermission>
		<documentstage>not transferred</documentstage>
		<nexthigherunit>8JMKD3MGPCW/3ESR3H2</nexthigherunit>
		<hostcollection>dpi.inpe.br/plutao@80/2008/08.19.15.01</hostcollection>
		<notes>14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011) Location: Cleveland, OH Date: SEP 11-16, 2011</notes>
		<username>marciana</username>
		<lasthostcollection>dpi.inpe.br/plutao@80/2008/08.19.15.01</lasthostcollection>
		<url>http://plutao.sid.inpe.br/rep-/dpi.inpe.br/plutao/2012/11.28.15.12</url>
	</metadata>
</metadatalist>